Title :
Radiation-hardened MNOS RAM technology
Author :
Marraffino, Paul ; Newman, Roger ; Wegener, Richard A H ; Borovicka, Millicent B. ; Lewis, Edward T. ; Lodi, Robert J.
Author_Institution :
Sperry Rand Corporation, Great Neck, NY
fDate :
8/1/1978 12:00:00 AM
Abstract :
Development of a fast writing MNOS memory transistor along with a compatible hardened oxide peripheral transistor has led to successful fabrication of radiation-hardened MNOS RAM circuits. Using a 2.8-µs write cycle and 1.0-µs access time, 24-h retention and 1011write cycle endurance have been demonstrated on a 256-bit MNOS RAM.
Keywords :
Fabrication; Gyroscopes; Isolation technology; Laboratories; Missiles; Neck; Random access memory; Read-write memory; Weapons; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19223
