• DocumentCode
    1061037
  • Title

    Radiation-hardened MNOS RAM technology

  • Author

    Marraffino, Paul ; Newman, Roger ; Wegener, Richard A H ; Borovicka, Millicent B. ; Lewis, Edward T. ; Lodi, Robert J.

  • Author_Institution
    Sperry Rand Corporation, Great Neck, NY
  • Volume
    25
  • Issue
    8
  • fYear
    1978
  • fDate
    8/1/1978 12:00:00 AM
  • Firstpage
    1054
  • Lastpage
    1060
  • Abstract
    Development of a fast writing MNOS memory transistor along with a compatible hardened oxide peripheral transistor has led to successful fabrication of radiation-hardened MNOS RAM circuits. Using a 2.8-µs write cycle and 1.0-µs access time, 24-h retention and 1011write cycle endurance have been demonstrated on a 256-bit MNOS RAM.
  • Keywords
    Fabrication; Gyroscopes; Isolation technology; Laboratories; Missiles; Neck; Random access memory; Read-write memory; Weapons; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19223
  • Filename
    1479617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061037