• DocumentCode
    1061066
  • Title

    1 K-bit nonvolatile semiconductor read/write RAM

  • Author

    Uchida, Yukimasa ; Saito, Shozo ; Nakane, Masayoshi ; Endo, Norio ; Matsuo, Takeshi ; Nishi, Yoshio

  • Author_Institution
    Toshiba Research and Development Center, Kawasaki, Kanagawa, Japan
  • Volume
    25
  • Issue
    8
  • fYear
    1978
  • fDate
    8/1/1978 12:00:00 AM
  • Firstpage
    1066
  • Lastpage
    1070
  • Abstract
    A 1024-bit nonvolatile semiconductor read/write random access memory (RAM) is described which is operated as a static RAM under a stable power supply, and the stored information can be transferred into MNOS memory transistors for nonvolatile storage when the power supply is turned off. A nonvolatile flip-flop cell consisting of 8 MOS transistors and 2 MNOS transistors is used on the basis of p-channel silicon gate technology. The chip size is 4.36 × 5.50 mm2. Typical read access time is 900 ns, and the stored data can last for more than one year. Endurable power on and off cycles are 105cycles.
  • Keywords
    MOSFETs; Nonvolatile memory; Random access memory; Read-write memory; Semiconductor films; Silicon; Substrates; Threshold voltage; Tiles; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19225
  • Filename
    1479619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061066