DocumentCode :
1061119
Title :
Numerical Investigation for CF4 Decomposition Using RF Low-Pressure Plasma
Author :
Kuroki, Tomoyuki ; Tanaka, Shingo ; Okubo, Masaaki ; Yamamoto, Toshiaki
Author_Institution :
Osaka Prefecture Univ., Sakai
Volume :
43
Issue :
4
fYear :
2007
Firstpage :
1075
Lastpage :
1083
Abstract :
Among perfluorocompounds, is considered to be one of the most stable and difficult-to-decompose gases. We investigated the decomposition of CF4 using the inductively coupled plasma (ICP) reactor with radio frequency (RF) power supply, which was used for semiconductor cleaning process as well as decomposition. This technology was confirmed to achieve an extremely high efficiency and more economical system in comparison with the conventional system. The purpose of this paper is to perform numerical simulation of CF4 decomposition using RF low-pressure plasma. The experimental investigation of CF4 the decomposition was performed to validate the computed results, and the reaction products such as CO, CO2, and COF2 upon the CF4 decomposition were measured CO2 using a analyzer and a Fourier transform infrared spectrophotometer. Then, the numerical simulations of the CF4 decomposition using commercially available code were performed to obtain the gas temperature, electron temperature, electron number density, gas velocity, and chemical species number density distribution to cope with CF4 the decomposition in the ICP reactor.
Keywords :
Fourier transform spectra; dissociation; infrared spectra; organic compounds; plasma chemistry; spectrochemical analysis; Fourier transform infrared spectrophotometer; RF low-pressure plasma; chemical species number density distribution; difflcult-to-decompose gases; electron number density; gas velocity; inductively coupled plasma reactor; numerical investigation; perfluorocompounds; radio frequency power supply; semiconductor cleaning process; tetrafluoromethane decomposition; Electrons; Gases; Inductors; Numerical simulation; Plasma simulation; Plasma stability; Plasma temperature; Power supplies; Radio frequency; Temperature distribution; $hbox{CF}_{4}$ decomposition; inductively coupled plasma (ICP); numerical simulation; radio frequency (RF) plasma;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2007.900468
Filename :
4276853
Link To Document :
بازگشت