Title :
A high cutoff frequency planar Schottky diode with a stripe geometry junction
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
9/1/1978 12:00:00 AM
Abstract :
Design and experimental results of a planar Schottky-barrier diode suitable for use in MIC´s are presented. The Schottky junction has a stripe geometry with a closely located ohmic contact. This geometry is effective in reducing the skin-effect parasitic resistance to yield a high cutoff frequency. The experimental diode has been fabricated using n and n+GaAs layers selectively grown on a semi-insulating substrate. A zero-bias cutoff frequency of more than 700 GHz has been obtained.
Keywords :
Circuit testing; Cutoff frequency; Gallium arsenide; Geometry; Ohmic contacts; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19231
