DocumentCode :
1061212
Title :
A comprehensive model for Q switching in semiconductor lasers
Author :
Thomas, Ben ; Adams, M.J. ; Gründorfer, Stephan
Author_Institution :
University of Wales Institute of Science and Technology, Cardiff, Wales, United Kingdom
Volume :
11
Issue :
7
fYear :
1975
fDate :
7/1/1975 12:00:00 AM
Firstpage :
528
Lastpage :
532
Abstract :
By combining a carrier concentration-dependent loss term with our earlier time-dependent saturable absorption loss term we have produced a comprehensive theory for 
switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.
switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.Keywords :
Absorption; Delay effects; Laser modes; Laser theory; Optical losses; Optical pulses; P-n junctions; Semiconductor lasers; Temperature dependence;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1975.1068629
Filename :
1068629
Link To Document :
