Title :
Millimeter-wave GaAs read IMPATT diodes
Author :
Adlerstein, Michael G. ; Wallace, Roger N. ; Steele, Samuel R.
Author_Institution :
Raytheon Company, Waltham, MA
fDate :
9/1/1978 12:00:00 AM
Abstract :
We have designed, fabricated, and evaluated gallium arsenide Read IMPATT diodes for Ka-band (36-38 GHz)operation. The devices were packaged units intended for manufacturability and high yield. Oscillator output power as high as 710-mW CW was obtained at 9-percent efficiency. This paper describes design and fabrication techniques employed and discusses the potential and limitations of such devices.
Keywords :
Doping profiles; Frequency; Gallium arsenide; Manufacturing; Microwave devices; Microwave oscillators; Millimeter wave technology; Packaging; Power generation; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19240
