DocumentCode :
106138
Title :
A 275 GHz Active Vector-Sum Phase Shifter
Author :
Quan, C. ; Heo, S. ; Urteaga, M. ; Kim, M.
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume :
25
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
127
Lastpage :
129
Abstract :
Terahertz vector-sum phase shifters capable of 360° phase control over the frequency range of 240 to 310 GHz are presented. Because the impedance mismatch of the variable-gain amplifiers employed in the phase shifter determines the flatness of the offset phases, a new broadband VGA design with its input and output impedances unaffected by dc bias is introduced. The measured results on the phase shifter fabricated using 0.25 μm InP HBT technology show incremental phase shifts of 45° with an average RMS offset phase error of 3.6° and insertion loss of -1 to -13 dB for eight basis dc bias states.
Keywords :
III-V semiconductors; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; millimetre wave bipolar transistors; millimetre wave phase shifters; submillimetre wave amplifiers; HBT technology; InP; RMS offset phase error; active vector-sum phase shifter; broadband VGA design; dc bias; dc bias states; frequency 240 GHz to 310 GHz; impedance mismatch; input-output impedances; loss -1 dB to -13 dB; offset phase flatness; phase control; size 0.25 mum; terahertz vector-sum phase shifters; variable-gain amplifiers; Bandwidth; Gain; Heterojunction bipolar transistors; Impedance matching; Phase control; Phase measurement; Phase shifters; InP HBT; phase shifter; terahertz IC; variable-gain amplifier (VGA);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2014.2382655
Filename :
6994870
Link To Document :
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