Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate

Reduced inductance via-connections to source electrodes through the substrate of GaAs MESFET´s have been fabricated in a reproducible manner by means of etching, electroless gold plating, and electroplating. The short gold-plated source connections reduce the common-lead parasitic source inductance by a large factor, resulting in gain increases of 2 dB at 4 GHz. At higher frequencies, the improvement over conventionally bonded transistors would become more pronounced.