DocumentCode :
106143
Title :
Assessment of Influence of Impedance Mismatch in ULSI Devices on Electromigration of Copper Interconnection Lines
Author :
Livshits, P. ; Rysin, A. ; Sofer, S. ; Fefer, Y.
Author_Institution :
Sch. of Eng., Bar-Ilan Univ., Ramat Gan, Israel
Volume :
13
Issue :
1
fYear :
2013
fDate :
Mar-13
Firstpage :
231
Lastpage :
235
Abstract :
In this work, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines on electromigration (EM) and Joule-heating failure mechanisms has been qualitatively studied. Signals corrupted by the impedance mismatch were experimentally measured within a 45-nm CMOS technology ULSI test chip. The signals´ current waveforms were obtained using a SPICE simulator. These voltage and current waveforms have been taken as a basis for our calculations. The results reveal that distortions of current shape, which are caused by the mismatched output impedance of a CMOS driver, lead to substantial aggravation of the EM and Joule heating in a driven line. Furthermore, it was found that the impedance mismatch causes serious modifications of current shape of a CMOS inverter connected to the far end of the line. This in turn aggravates both EM and Joule heating in the next-stage line that loads this CMOS inverter.
Keywords :
CMOS integrated circuits; ULSI; copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit testing; logic gates; transmission lines; CMOS inverter; CMOS technology ULSI test chip; Cu; EM; Joule-heating failure mechanisms; SPICE simulator; ULSI devices; copper interconnection lines; electromigration; impedance mismatch assessment; on-die CMOS drivers; signal current waveforms; size 45 nm; transmission lines; CMOS integrated circuits; Electromigration; Impedance; Inverters; Power transmission lines; Reliability; Ultra large scale integration; Electromigration (EM) and Joule heating; impedance matching; integrated circuits; on-die transmission lines;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2236556
Filename :
6395250
Link To Document :
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