DocumentCode
1061436
Title
GaAs-GaAlAs heterostructure lasers on semi-insulating substrates
Author
Lee, Chien-ping ; Margalit, Shlomo ; Yariv, Amnon
Author_Institution
Bell Laboratories, Holmdel, NJ
Volume
25
Issue
10
fYear
1978
fDate
10/1/1978 12:00:00 AM
Firstpage
1250
Lastpage
1256
Abstract
Two structures of GaAs-GaAlAs heterostructures were fabricated on semi-insulating substrates. Low-threshold single-mode operation was achieved. The integration of a laser with an active electronic device (Gunn oscillator) on the same chip of GaAs was demonstrated.
Keywords
Couplers; Electron mobility; Electron optics; Etching; Gallium arsenide; Gunn devices; High speed optical techniques; Optical devices; Oscillators; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19260
Filename
1479654
Link To Document