DocumentCode :
1061452
Title :
A Low-Consumption Regulated Gate Driver for Power MOSFET
Author :
Tzeng, Ren-Huei ; Chen, Chern-Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
24
Issue :
2
fYear :
2009
Firstpage :
532
Lastpage :
539
Abstract :
Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the loss of charging and discharging the gate capacitor. No extra off-chip components are required, and hence, the proposed approach can be completely designed on chip. A 40 V/0.5 mum CMOS technology is utilized and experiments on a boost converter are performed. The power dissipation of the proposed gate driver, compared with the conventional gate driver, can be reduced up to 15.5% and 55.4% under 15 V and 30 V supply voltage, respectively.
Keywords :
CMOS integrated circuits; power MOSFET; power convertors; CMOS technology; boost converter; gate capacitor; low-consumption regulated gate driver; power MOSFET; size 0.5 mum; switching power conversion applications; voltage 15 V; voltage 30 V; voltage 40 V; Gate driver; high frequency; power MOSFET; switching loss;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2008.2007213
Filename :
4745755
Link To Document :
بازگشت