DocumentCode :
106150
Title :
A Multi- 
a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions
Author :
Xin He ; Xiang Xiao ; Yang Shao ; Wei Deng ; Chuanli Leng ; Shengdong Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
35
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1248
Lastpage :
1250
Abstract :
A multithreshold voltage amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) technology based on the anodic oxidation (anodization) technique is demonstrated. It is shown that the characteristics of the a-IGZO channel layer can be considerably tailored by the anodization treatment. As a result, the threshold voltage of the a-IGZO TFTs depends on the anodization voltage, making it possible to fabricate both depletion and enhancement mode TFTs on the same substrate. The secondary ion mass spectrometry result shows that the oxygen content is noticeably increased in the anodized a-IGZO film, suggesting that the dependence of the threshold voltage on the anodization treatment is attributed to the anodization-induced reduction of oxygen vacancy concentration in the channel region, which also leads to an alleviated Vth shift under negative bias illumination stress in the anodized devices.
Keywords :
anodisation; indium compounds; secondary ion mass spectroscopy; thin film transistors; TFT technology; anodic oxidation; anodization; channel regions; multithreshold voltage amorphous thin film transistor; negative bias illumination stress; oxygen vacancy concentration; secondary ion mass spectrometry; Indium gallium zinc oxide; Oxidation; Performance evaluation; Thin film transistors; Threshold voltage; TFT; a-IGZO; anodic oxidation; anodic oxidation.; multi threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2359931
Filename :
6922483
Link To Document :
