DocumentCode
1061542
Title
Mo gate tetrode
Author
Brow, Dale M. ; Connery, Richard J.
Author_Institution
General Electric Corporate Research and Development, Schenectady, NY
Volume
25
Issue
11
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
1302
Lastpage
1307
Abstract
The n-channel high-frequency dual-gate MOSFET´s or tetrodes made using Mo gate (RMOS) self-aligned processing are described. This includes design and processing considerations, manufacturing yield, and high-frequency performance. Each of the two gates are protected with p-n diode structures which exhibit silicon-controlled rectifier action, UHF data on devices built on epitaxial wafers show high-gain narrow-bandwidth characteristics.
Keywords
Diodes; Etching; Frequency response; Glass; Integrated circuit yield; Ion implantation; Process design; Protection; Radiofrequency amplifiers; Silicon compounds;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19270
Filename
1479664
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