DocumentCode
1061594
Title
The influence of nitride thickness variations on the switching speed of MNOS memory transistors
Author
Bruun, Erik
Author_Institution
Technical University of Denmark, Lyngby, Denmark
Volume
25
Issue
11
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
1328
Lastpage
1331
Abstract
The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
Keywords
Capacitance; Character generation; Insulation; Permittivity; Region 1; Region 2; Region 3; Switching circuits; Thickness measurement; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19275
Filename
1479669
Link To Document