Title :
Influence of surface states on the measurement of field-effect mobility
Author_Institution :
RCA Corporation, Princeton, NJ
fDate :
11/1/1978 12:00:00 AM
Abstract :
The effect of surface states on the measurement of field mobility has been analyzed. The result shows that this effect is important when the rate of change of the surface charge density with respect to the surface potential is larger than the mobile charge density at the conductive channel of the MOSFET.
Keywords :
Charge carrier processes; Current measurement; Current-voltage characteristics; Fabrication; Impurities; MOSFET circuits; Scattering; Stress; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19276
