• DocumentCode
    1061617
  • Title

    Monolithic Ga1-xInxAs diode lasers

  • Author

    Doerbeck, F.H. ; Lawley, K.L. ; Blum, F.A. ; Campbell, J.C.

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX, USA
  • Volume
    11
  • Issue
    7
  • fYear
    1975
  • fDate
    7/1/1975 12:00:00 AM
  • Firstpage
    464
  • Lastpage
    467
  • Abstract
    Monolithic homojunction diode lasers have been fabricated from vapor-grown Ga1-xInxAs ( 0 \\leq x \\geq 0.06 ) mesa structures with grown optical facets. The Ga1-xInxAs lasers have been operated at 77 K, and similar GaAs mesa devices have lased between 77 K and 300 K. Monolithic arrays of up to six mesa lasers on a single substrate have been operated with all lasers oscillating simultaneously.
  • Keywords
    Diode lasers; Fiber lasers; Gallium arsenide; Optical arrays; Optical device fabrication; Optical pumping; Optical waveguides; Pump lasers; Semiconductor laser arrays; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1975.1068665
  • Filename
    1068665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061617