40-Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser

Author

Cheng, Yuanbing ; Pan, Jiaoqing ; Wang, Yang ; Zhou, Fan ; Wang, Baojun ; Zhao, Lingjuan ; Zhu, Hongliang ; Wang, Wei

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing

Volume

21

Issue

6

fYear

2009

fDate

3/15/2009 12:00:00 AM

Firstpage

356

Lastpage

358

Abstract

A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB DC extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.

Keywords

III-V semiconductors; chirp modulation; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical fibre communication; optical transmitters; quantum well devices; ridge waveguides; semiconductor lasers; DC extinction ratio; DFB semiconductor laser; EAM capacitance; InGaAsP; bit rate 40 Gbit/s; buried benzocyclobutene; capacitance 0.18 pF; current 20 mA; deep ridge waveguide; distributed-feedback laser; low-chirp electroabsorption modulator; lumped electrode; monolithically integrated transmitter; multiple-quantum-well modulator; negative chirp operation; planar electrode structures; sidemode suppression ratio; single-mode fiber; small-signal modulation bandwidth; voltage 1.6 V; wavelength 1550 nm; 40 Gb/s; Distributed-feedback (DFB) laser; electroabsorption modulator (EAM); low chirp; monolithic integration; selective area growth (SAG);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2011652

Filename

4745770