DocumentCode :
1061634
Title :
Grating-coupled double-heterostructure AlGaAs diode lasers
Author :
Zory, P. ; Comerford, L.D.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
11
Issue :
7
fYear :
1975
fDate :
7/1/1975 12:00:00 AM
Firstpage :
451
Lastpage :
457
Abstract :
Corrugated AlGaAs waveguide devices have been fabricated which emit low-divergence ( \\sim1\\deg by 15°) laser beams nearly normal to the waveguide plane when pulsed electrically at room temperature. The devices are fabricated from material which is essentially the same as that used to fabricate CW room-temperature lasers, differing only in that the two top layers of AlGaAs and GaAs are very thin ( \\sim0.4 \\mu m and 0.1 μm, respectively). Threshold current densities of 3000-4000 A/cm2are typical in these devices even though ∼20 percent of the resonator length is unpumped. The far-field pattern produced by the TE polarized leaky-wave laser beams emanating from the unpumped region is usually composed of two mode lines. A theory is outlined which describes how these mode lines are generated. The possibility of obtaining distributed-feedback (DFB) oscillation in devices of this type is also discussed.
Keywords :
Diode lasers; Gallium arsenide; Gratings; Laser beams; Optical materials; Optical pulses; Planar waveguides; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1975.1068667
Filename :
1068667
Link To Document :
بازگشت