• DocumentCode
    1061654
  • Title

    Sputter Deposition of {\\rm MoSi}_{2} Film as a Barrier for Nb-Based Josephson Junction

  • Author

    Chong, Yonuk ; Park, Se Il ; Kim, Kyu-Tae

  • Author_Institution
    Korea Res. Inst. of Stand. & Sci. (KRISS), Daejeon, South Korea
  • Volume
    19
  • Issue
    3
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    238
  • Lastpage
    241
  • Abstract
    Recently, sputter-deposited MoSi2 films have been successfully used as a barrier material in Nb/MoSi2/Nb Josephson junctions. In this report, we present our study on the deposition conditions of MoSi2 film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.
  • Keywords
    Josephson effect; electron microscopes; molybdenum compounds; niobium; sputter deposition; Josephson junction; Nb-MoSi2-Nb; barrier material; electron microscopes; electronics application; film stress; sheet resistance; sputter deposition; thermal strain; Josephson junction; silicide; sputter; stress; thin film;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2009.2019074
  • Filename
    5067267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061654