DocumentCode :
1061684
Title :
GaAs GaAlAs double-heterostructure injection lasers with distributed feedback
Author :
Nakamura, Michiharu ; Aiki, K. ; Umeda, J. ; Katzir, A. ; Yariv, A. ; Yen, H.W.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
11
Issue :
7
fYear :
1975
fDate :
7/1/1975 12:00:00 AM
Firstpage :
436
Lastpage :
439
Abstract :
GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at temperatures between 80 and 150 K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the p-GaAlAs layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributed-feedback laser is shown to be 0.5 Å/°, which is about frac{1}{3} to frac{1}{4} that of the conventional Fabry-Perot (FP) laser.
Keywords :
Chemical lasers; Distributed feedback devices; Etching; Gallium arsenide; Laser feedback; Laser modes; Milling; Optical feedback; Optical pulses; Temperature;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1975.1068670
Filename :
1068670
Link To Document :
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