• DocumentCode
    1061723
  • Title

    Striped-substrate double-heterostructure lasers

  • Author

    Burnham, R.D. ; Scifres, D.R. ; Tramontana, J. ; Alimonda, A.S.

  • Author_Institution
    Xerox Corp., Palo Alto, CA, USA
  • Volume
    11
  • Issue
    7
  • fYear
    1975
  • fDate
    7/1/1975 12:00:00 AM
  • Firstpage
    418
  • Lastpage
    420
  • Abstract
    A different type of stripe-geometry laser is demonstrated in which current confinement is achieved by selective diffusion of the n-type substrate prior to growth of the GaAs/GaAlAs heterostructure layers. This structure exhibits low room-temperature threshold currents resulting from the small lateral-current spreading from the edges of the stripe. Lowest order transverse-mode operation is achieved for stripe widths of 10μm.
  • Keywords
    Absorption; DH-HEMTs; Diodes; Fabrication; Gallium arsenide; Geometry; Iron; Ohmic contacts; P-n junctions; Zinc;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1975.1068674
  • Filename
    1068674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061723