Oxygen-implanted double-heterojunction GaAs/GaAlAs injection lasers

We describe a new process for stripe formation in double-heterostructure GaAs/GaAlAs injection lasers. This process, which uses oxygen-ion implantation to form the stripe through a chemical doping effect, has several advantages over alternative methods, both with respect to device processing and device properties and has produced high yields of CW room-temperature lasers. We present the details of the device structure and fabrication processes. The results of annealing studies, optical measurements, and lifetesting are described.