• DocumentCode
    1061835
  • Title

    TA-A1 VLSI limitations from drain-induced barrier-lowering

  • Author

    Troutman, R.R.

  • Volume
    25
  • Issue
    11
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    1344
  • Lastpage
    1344
  • Keywords
    Capacitors; Circuit simulation; Coupling circuits; Doping; FETs; Numerical models; P-n junctions; Semiconductor process modeling; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19300
  • Filename
    1479694