Title :
TA-A4 a simple analytical short-channel MOS model including the velocity saturation effect on the capacitance and channel current
Author :
Sun, E. ; Moll, Jonas
fDate :
11/1/1978 12:00:00 AM
Keywords :
Analytical models; Capacitance; Circuit analysis computing; Circuit simulation; Doping; Electron mobility; Laboratories; Predictive models; Propagation delay; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19303
