DocumentCode
1061920
Title
TA-B4 the temperature dependence of impact ionization rates in GaAs between 20° and 250°C
Author
Capasso, Federico ; Nahory, R.E. ; Pollack, M.A.
Volume
25
Issue
11
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
1347
Lastpage
1347
Keywords
Charge carrier processes; Contracts; Gallium arsenide; Impact ionization; Indium phosphide; Laboratories; Photoelectricity; Polarization; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1978.19309
Filename
1479703
Link To Document