• DocumentCode
    1061957
  • Title

    TP-A2 electronic properties of a characteristic discrete level at the Si-SiO2interface

  • Author

    Johnson, Noble M. ; Bartelink, D.J. ; McVittie, James P.

  • Volume
    25
  • Issue
    11
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    1348
  • Lastpage
    1349
  • Keywords
    Annealing; Capacitance-voltage characteristics; Electron traps; Hydrogen; MOS capacitors; Photonic band gap; Surface treatment; Temperature; Vacuum systems; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19312
  • Filename
    1479706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1061957