مرکز منطقه ای اطلاع رساني علوم و فناوري - TP-A1 shallow-level electron traps in SiO<inf>2</inf>

DocumentCode :

1061984

Title :

TP-A1 shallow-level electron traps in SiO2

Author :

Ning, Tak H.

Volume :

Issue :

fYear :

1978

fDate :

11/1/1978 12:00:00 AM

Firstpage :

1348

Lastpage :

1348

Keywords :

Aluminum; Boats; Electron traps; FETs; Heating; Human computer interaction; Radio frequency; Silicon; Temperature; Threshold voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1978.19314

Filename :

1479708

Link To Document :