DocumentCode

1062039

Title

TP-A6 chemical-vapor-deposited silicon nitride: Effects of the NH3/SiH4ratio on MNOS memory

Author

Stein, H.J.

Volume

25

Issue

11

fYear

1978

fDate

11/1/1978 12:00:00 AM

Firstpage

1350

Lastpage

1350

Keywords

Bonding; Chemicals; Dielectric devices; Electron devices; Hydrogen; Inductors; Laboratories; Magnetic films; Silicon; Writing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1978.19319

Filename

1479713