Title :
TP-A6 chemical-vapor-deposited silicon nitride: Effects of the NH3/SiH4ratio on MNOS memory
fDate :
11/1/1978 12:00:00 AM
Keywords :
Bonding; Chemicals; Dielectric devices; Electron devices; Hydrogen; Inductors; Laboratories; Magnetic films; Silicon; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19319
