Title :
WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors
Author :
Dilorenzo, J.V. ; Niehaus, W.C. ; Cho, Andrew Y.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Charge coupled devices; Charge transfer; FETs; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Ohmic contacts; Radio frequency; Substrates; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19339
