• DocumentCode
    1062243
  • Title

    WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

  • Author

    Dilorenzo, J.V. ; Niehaus, W.C. ; Cho, Andrew Y.

  • Volume
    25
  • Issue
    11
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    1356
  • Lastpage
    1356
  • Keywords
    Charge coupled devices; Charge transfer; FETs; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Ohmic contacts; Radio frequency; Substrates; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19339
  • Filename
    1479733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062243