DocumentCode

1062275

Title

WP-A3 ambient effects on annealing of phosphorus implanted emitters

Author

Tseng, W.F. ; Koji, T. ; Mayer, J.W.

Volume

25

Issue

11

fYear

1978

fDate

11/1/1978 12:00:00 AM

Firstpage

1357

Lastpage

1358

Keywords

Annealing; Bipolar transistors; Degradation; Doping; Fluid flow; Laboratories; Semiconductor device noise; Semiconductor process modeling; Silicon; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1978.19342

Filename

1479736