• DocumentCode
    1062288
  • Title

    The Effects of Limited Drain Current and On Resistance on the Performance of an LDMOS Inverse Class-E Power Amplifier

  • Author

    You, Fei ; He, Songbai ; Tang, Xiaohong ; Deng, Xiangke

  • Author_Institution
    Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu
  • Volume
    57
  • Issue
    2
  • fYear
    2009
  • Firstpage
    336
  • Lastpage
    343
  • Abstract
    In this paper, the effects of limited drain current and transistor´s on resistance on the performance of an LDMOS inverse class-E power amplifier (PA) are analyzed using a simplified transistor model of piecewise linear dc I-V curves. The minimal magnitude of driving signal, the maximal voltage gain, and the maximal output power of an inverse class-E PA can be defined with the maximal drain kept. The theoretical and simulated results of amplifier performance, such as drain efficiency and output voltage, are compared to verify the analysis, and the nonlinear relation among the drain dc supply voltage, input/output voltage, and phase of an inverse class-E PA caused by limited drain current are presented. The effects on the amplifier performance are further verified by the measured results of a 945-MHz transmission-line inverse class-E amplifier in comparison with the corresponding theoretical and simulated results.
  • Keywords
    MOSFET; UHF power amplifiers; semiconductor device models; transmission lines; LDMOS inverse class-E power amplifier; frequency 945 MHz; limited drain current; on ressitance; piecewise linear dc I-V curves; simplified transistor model; transmission line inverse class-E amplifier; Inverse class-E power amplifier (PA); LDMOS; nonlinearity; on resistance; quasi-saturation;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2008.2011175
  • Filename
    4745832