Title :
WP-A4 a model for dopant incorporation into silicon epitaxial films
Author :
Reif, R. ; Saraswat, Krishna C. ; Kamins, Theodore I.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Boron; Doping; Fluid flow; Laboratories; Oxidation; Semiconductor films; Semiconductor process modeling; Silicon; Steady-state; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19345
