NLDD/PHALO-Assisted Low-Trigger SCR for High-Voltage-Tolerant ESD Protection Without Using Extra Masks

Author

Shan, Yi ; He, John ; Hu, Brian ; Liu, Jian ; Huang, Wen

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai

Volume

30

Issue

7

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

778

Lastpage

780

Abstract

A new silicon-controlled rectifier (SCR) is proposed and realized in the foundry´s 0.18-mum CMOS process for electrostatic discharge (ESD) protection. Without using an extra mask or trigger circuits, the new n-type lightly doped drain and p-type halo-assisted SCR has a trigger voltage V_t1 as low as 7 V and an ESD robustness exceeding 50 mA/mum, which enables effective ESD protection. Compared with the traditional low-voltage-triggered SCR, the new structure not only has a lower trigger voltage but also is more suitable for high-voltage-tolerant applications avoiding any gate-oxide reliability issue.

Keywords

CMOS integrated circuits; electrostatic discharge; radiation hardening (electronics); thyristors; ESD robustness; NLDD -assisted low-trigger SCR; PHALO-assisted low-trigger SCR; high-voltage-tolerant ESD protection; high-voltage-tolerant applications; n-type lightly doped drain; p-type halo-assisted SCR; silicon-controlled rectifier; size 0.18 mum; voltage 7 V; Electrostatic discharge (ESD); gate-oxide reliability; halo; high-voltage tolerant; lightly doped drain; low trigger voltage; silicon-controlled rectifier (SCR);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2022350

Filename

5067329