• DocumentCode
    1062376
  • Title

    WP-B6 investigation of heterojunctions for MIS devices with insulating AlxGa1-xAs on n-type GaAs

  • Author

    Cho, Andrew Y. ; Lang, D.V. ; Nicollian, E.H. ; Foy, P.W.

  • Volume
    25
  • Issue
    11
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    1361
  • Lastpage
    1361
  • Keywords
    Dielectric devices; Dielectrics and electrical insulation; FETs; Gallium arsenide; Heterojunctions; Interface states; MIS devices; Molecular beam epitaxial growth; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19352
  • Filename
    1479746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062376