DocumentCode
1062659
Title
Reliability program and results for a 4K dynamic RAM
Author
Batdorf, Harold A. ; Hensler, Donald H. ; Wasson, Ronald D.
Author_Institution
Bell Laboratories, Inc., Allentown, PA
Volume
26
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
52
Lastpage
56
Abstract
A comprehensive reliability program for an n-channel silicon gate 4K dynamic RAM is described. The program included dynamic high-temperature accelerated aging for various time periods followed by thorough electrical testing. Results including failure mechanism descriptions, acceleration factors, and projected failure rates during system use are included. The actual failure rate during system use is under 100 FIT´s after less than one year of operation.
Keywords
Accelerated aging; Clocks; DRAM chips; Electronic switching systems; Large scale integration; Logic testing; Manufacturing processes; Packaging; Power generation economics; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19379
Filename
1479957
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