• DocumentCode
    1062687
  • Title

    Properties of 1.4×2.8 μm2 active area M-R elements

  • Author

    Granley, G.B. ; Daughton, J.M. ; Pohm, A.V. ; Comstock, C.S.

  • Author_Institution
    Honeywell S.S.E.C., Plymouth, MN, USA
  • Volume
    27
  • Issue
    6
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    5517
  • Lastpage
    5519
  • Abstract
    Densely packed magnetoresistive memory cells with active areas of 1.4×2.8 μm2 have been studied experimentally and compared to larger 2.0×12 μm2 cells. The experimental results show that the smaller cells, although having smaller output voltages (0.3 mV), have about the same statistical distributions for critical parameters as the larger cells. Using the current nominal 1.2 μm lithography prototype process, which adds one extra mask to the semiconductor processing, cells with an area of 12.6 μm2 are achieved. By adding another extra mask, the area can be reduced to 5.6 μm2
  • Keywords
    lithography; magnetic film stores; magnetoresistance; 1.2 micron; active area M-R elements; critical parameters; lithography prototype process; magnetoresistive memory cells; mask; output voltages; statistical distributions; Bandwidth; Conducting materials; Contact resistance; Magnetic anisotropy; Magnetic materials; Magnetic separation; Perpendicular magnetic anisotropy; Saturation magnetization; Sheet materials; Testing;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.278888
  • Filename
    278888
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062687