DocumentCode :
1062816
Title :
Influence of an external resistor on second breakdowns in epitaxial planar transistors
Author :
Hane, Kunio ; Mogi, Makoto ; Suzuki, Tokio
Author_Institution :
Keio University, Yokohama, Japan
Volume :
26
Issue :
2
fYear :
1979
fDate :
2/1/1979 12:00:00 AM
Firstpage :
157
Lastpage :
158
Abstract :
The boundary condition between current mode and thermal mode second breakdowns is analyzed theoretically considering the influence of the external resistor. Also the triggering energy and distribution of temperature along collector n-layer for thermal mode second breakdown is discussed.
Keywords :
Boundary conditions; Delay effects; Difference equations; Electric breakdown; Epitaxial layers; Impurities; Poisson equations; Resistors; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19395
Filename :
1479973
Link To Document :
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