DocumentCode
1062827
Title
Calculation of charge-handling capacity in twin-layer peristaltic charge-coupled devices
Author
Lin, Wen N. ; Chan, Yum T.
Author_Institution
Rockwell International, Anaheim, CA
Volume
26
Issue
2
fYear
1979
fDate
2/1/1979 12:00:00 AM
Firstpage
158
Lastpage
162
Abstract
Charge-handling capacity is an important parameter in determining the dynamic range of a charge-coupled device (CCD). Based on depletion approximation, a one-dimensional charge storage capacity calculation is given for an n-channel twin-layer peristaltic CCD with constant layer dopings. The charge capacity is found to increase linearly with surface layer implant dose for lower level implant and saturate at higher level implant.
Keywords
Charge coupled devices; Density measurement; Doping profiles; Dynamic range; Electrons; Poisson equations; Potential energy; Space charge; Thickness measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19396
Filename
1479974
Link To Document