DocumentCode :
1062827
Title :
Calculation of charge-handling capacity in twin-layer peristaltic charge-coupled devices
Author :
Lin, Wen N. ; Chan, Yum T.
Author_Institution :
Rockwell International, Anaheim, CA
Volume :
26
Issue :
2
fYear :
1979
fDate :
2/1/1979 12:00:00 AM
Firstpage :
158
Lastpage :
162
Abstract :
Charge-handling capacity is an important parameter in determining the dynamic range of a charge-coupled device (CCD). Based on depletion approximation, a one-dimensional charge storage capacity calculation is given for an n-channel twin-layer peristaltic CCD with constant layer dopings. The charge capacity is found to increase linearly with surface layer implant dose for lower level implant and saturate at higher level implant.
Keywords :
Charge coupled devices; Density measurement; Doping profiles; Dynamic range; Electrons; Poisson equations; Potential energy; Space charge; Thickness measurement; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19396
Filename :
1479974
Link To Document :
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