• DocumentCode
    1062827
  • Title

    Calculation of charge-handling capacity in twin-layer peristaltic charge-coupled devices

  • Author

    Lin, Wen N. ; Chan, Yum T.

  • Author_Institution
    Rockwell International, Anaheim, CA
  • Volume
    26
  • Issue
    2
  • fYear
    1979
  • fDate
    2/1/1979 12:00:00 AM
  • Firstpage
    158
  • Lastpage
    162
  • Abstract
    Charge-handling capacity is an important parameter in determining the dynamic range of a charge-coupled device (CCD). Based on depletion approximation, a one-dimensional charge storage capacity calculation is given for an n-channel twin-layer peristaltic CCD with constant layer dopings. The charge capacity is found to increase linearly with surface layer implant dose for lower level implant and saturate at higher level implant.
  • Keywords
    Charge coupled devices; Density measurement; Doping profiles; Dynamic range; Electrons; Poisson equations; Potential energy; Space charge; Thickness measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19396
  • Filename
    1479974