DocumentCode :
1062897
Title :
Gunn-effect inhibitor and its application to high-speed carry finding device
Author :
Hashizume, Nobuo ; Kataoka, Shoei
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Volume :
26
Issue :
3
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
183
Lastpage :
190
Abstract :
A new type of Gunn-effect inhibitor and a high-speed carry finding device for 8-bit binary adder using the inhibitors are described. The inhibitor is an integration of a Schottky-electrode-triggered Gunn element, a MESFET, and a resistor. The inhibitor retains the high-speed property of, and the operational margin whatsoever owned by the Schottky-electrode-triggered Gunn element. The high-speed carry finding device was made monolithically integrated on a GaAs epi-layer. A novel means employing Schottky barriers is used in the interconnection of the inhibitors. With such means, a signal can be processed with good efficiency and enough operational margin. Experimental results showed that carry signals could be found at the rate of 20 ps/inhibitor. The anode-voltage margin of the whole device was 7 percent.
Keywords :
Delay effects; Electrodes; Gallium arsenide; Gunn devices; Inhibitors; Logic devices; MESFETs; Resistors; Shift registers; Signal processing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19402
Filename :
1479980
Link To Document :
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