Title :
Robust Intermediate Read-Out for Deep Submicron Technology CMOS Image Sensors
Author :
Shoushun, Chen ; Boussaid, Farid ; Bermak, Amine
fDate :
3/1/2008 12:00:00 AM
Abstract :
In this paper, a CMOS image sensor featuring a novel spiking pixel design and a robust digital intermediate read-out is proposed for deep submicron CMOS technologies. The proposed read-out scheme exhibits a relative insensitivity to the ongoing aggressive scaling of the supply voltage. It is based on a novel compact spiking pixel circuit, which combines digitizing and memory functions. Illumination is encoded into a Gray code using a very simple yet robust Gray 8-bit counter memory. Circuit simulations and experiments demonstrate the successful operation of a 64 64 image sensor, implemented in a 0.35 CMOS technology. A scalability analysis is presented. It suggests that deep sub-0.18 will enable the full potential of the proposed Gray encoding spiking pixel. Potential applications include multiresolution imaging and motion detection.
Keywords :
CMOS image sensors; Gray codes; lighting; CMOS image sensors; Gray 8-bit counter memory; Gray code; deep submicron technology; illumination; motion detection; multiresolution imaging; robust intermediate read-out; spiking pixel; CMOS image sensors; CMOS technology; Circuit simulation; Counting circuits; Image sensors; Lighting; Pixel; Reflective binary codes; Robustness; Voltage; CMOS image sensor; intermediate read-out; scalability; spiking pixel;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2007.912783