• DocumentCode
    1062953
  • Title

    Oscillation phenomenon in thick-film CO sensor

  • Author

    Nitta, Masayoshi ; Haradome, Miyoshi

  • Author_Institution
    Nihon University at Narashino, Narashinodai, Funabashi, Japan
  • Volume
    26
  • Issue
    3
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    219
  • Lastpage
    223
  • Abstract
    An oscillation phenomenon in ThO2-doped SnO2prepared by thick-film technology has been studied. The oscillation consists of two components at high sample temperature (210-230°C). When the sample temperature is kept at 210°C, a single-component oscillation with a sawtooth waveform starts to appear as CO-gas concentration increases. The activation energies of the surface reaction are 28.9 kcal/mol and 11.9 kcal/mol at the sample temperatures of 180-200°C and 210-230°C, respectively. From these experiments, it has been found that the coverage of oxygen on the surface plays an important role in establishing the oscillatory states.
  • Keywords
    Gallium arsenide; Gas detectors; Lighting; Niobium compounds; Semiconductor materials; Sensor phenomena and characterization; Silicon compounds; Temperature sensors; Thick film sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19408
  • Filename
    1479986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062953