DocumentCode
1062982
Title
The effect of hole versus electron photocurrent on microwave—Optical interactions in IMPATT oscillators
Author
Vyas, H.P. ; Gutmann, R.J. ; Borrego, J.M.
Author_Institution
Rensselaer Polytechnic Institute, Troy, NY
Volume
26
Issue
3
fYear
1979
fDate
3/1/1979 12:00:00 AM
Firstpage
232
Lastpage
234
Abstract
The effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static 
characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.
characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.Keywords
Capacitance; Charge carrier processes; Diodes; Electron optics; Laser tuning; Microwave oscillators; Optical saturation; Optical waveguides; Photoconductivity; Radio frequency;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19411
Filename
1479989
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