DocumentCode :
1062990
Title :
Conduction current injection delay in Read GaAs IMPATT diodes
Author :
Adlerstein, M.G. ; Statz, H.
Author_Institution :
Raytheon Company, Research Division, Waltham, MA
Volume :
26
Issue :
3
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
234
Lastpage :
236
Abstract :
We find experimentally that, for GaAs Read avalanche diodes, the optimal drift region width is not simply inversely proportional to optimum frequency. This finding can be understood by noting that the injection phase of the avalanche current into the drift region is not 90° with respect to the voltage maximum, but varies as a function of frequency. The experimental observations are in reasonable agreement with solutions of the Read equation which include the reverse junction saturation current. The theoretical fit to the data is relatively insensitive to the avalanche intrinsic response time, and thus we cannot make an independent determination of its value at present.
Keywords :
Delay effects; Diodes; Electron mobility; Equations; Frequency; Gallium arsenide; Laboratories; Temperature sensors; Testing; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19412
Filename :
1479990
Link To Document :
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