Radio Frequency Current-Voltage Curve Including Breakdown Effect Implemented in Large Signal Model for Validation

Author

Chie-In Lee ; Yan-Ting Lin ; Wei-Cheng Lin

Author_Institution

Dept. of Electr. Eng. & Inst. of Commun. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

24

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

487

Lastpage

489

Abstract

A metal-oxide-semiconductor field-effect transistor (MOSFET) radio frequency current-voltage (RF I-V) curve with the drain breakdown effect considered is demonstrated for the first time. The validity of the presented approach is extended to the breakdown region by including the breakdown conductance when realizing the RF I-V curve. The presented RF I-V is verified by implementing this curve into a large signal model, and then the simulated output spectrum can agree well with the measured results. Therefore, this accurate breakdown RF I-V can provide a guideline for output performance analysis and RF circuit design.

Keywords

MOSFET; S-parameters; electric breakdown; MOSFET radio frequency current-voltage curve; RF circuit design; breakdown conductance; breakdown region; drain breakdown effect; large signal model; metal-oxide-semiconductor field-effect transistor RF I-V curve; output performance analysis; simulated output spectrum; Current measurement; Dispersion; Electric breakdown; Frequency measurement; MOSFET; Radio frequency; Wireless communication; Breakdown; large signal; radio frequency current-voltage (RF I–V); small signal;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2316270

Filename

6810201