• DocumentCode
    1063001
  • Title

    Noise reduction in transferred electron oscillator modules

  • Author

    Howes, M.J. ; Morgan, D.V. ; Blundell, R. ; Greenhalgh, S.

  • Author_Institution
    University of Leeds, Leeds, England
  • Volume
    26
  • Issue
    3
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    237
  • Lastpage
    238
  • Abstract
    The FM noise performance of oscillator modules based on GaAs transferred electron devices characterized by carrier notches close to the cathode contact is presented. The notches have been incorporated into completed and encapsulated devices by ion-implantation techniques, the notches proving stable up to 400°C. Useful improvements in the FM noise performance close to the carrier are available using this technique.
  • Keywords
    Cathodes; Contacts; Electrons; Frequency modulation; Gallium arsenide; Gunn devices; Ion beams; Microwave oscillators; Noise reduction; Scattering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19413
  • Filename
    1479991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063001