Title :
A novel Schottky diode with controlled barrier height
Author :
Kajiyama, Kenji ; Ida, Masao ; Sakata, Seizou ; Mizushima, Yoshihiko
Author_Institution :
Electrical Communications Laboratories, Musashino, Tokyo, Japan
fDate :
3/1/1979 12:00:00 AM
Abstract :
InxGa1-xAs Schottky diodes are fabricated, and the current sensitivity and conversion loss are measured. Although the present result is preliminary, it supports the previous theoretical prediction of the optimization of the Schottky barrier height (φ = 0.3 V).
Keywords :
Doping profiles; Electron devices; Etching; Gallium arsenide; Indium gallium arsenide; MOSFET circuits; Neodymium; Power MOSFET; Schottky diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19417
