• DocumentCode
    1063115
  • Title

    LSI and VLSI research in Japan

  • Author

    Tarui, Yasuo

  • Author_Institution
    VLSI Technical Research Association, Kawasakishi, Japan
  • Volume
    26
  • Issue
    4
  • fYear
    1979
  • fDate
    4/1/1979 12:00:00 AM
  • Firstpage
    259
  • Lastpage
    270
  • Abstract
    This report will review recent advancements in LSI and VLSI research in Japan, especially concerning the basic technology useful for microfabrication. The first computer-controlled vector scan electron-beam exposure system in Japan was reported in 1967. Recently, the variable area rectangular technique has been experimentally pursued. Another group is working on probe forming by quadrupole lenses. A raster scan electron system enabling high charge density electron-beam exposure and use of PMMA resist has been designed and constructed. In the processing field, a high-frequency plasma system, a plasma transport system, and a high-pressure oxidation system are under development. Various self-aligning devices, such as diffusion self-alignment, multiple-wall self-alignment, and those which work near punch-through regions are described in this report.
  • Keywords
    Electrons; Large scale integration; Lenses; Plasma density; Plasma devices; Plasma materials processing; Plasma transport processes; Probes; Resists; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19423
  • Filename
    1480001