DocumentCode
1063115
Title
LSI and VLSI research in Japan
Author
Tarui, Yasuo
Author_Institution
VLSI Technical Research Association, Kawasakishi, Japan
Volume
26
Issue
4
fYear
1979
fDate
4/1/1979 12:00:00 AM
Firstpage
259
Lastpage
270
Abstract
This report will review recent advancements in LSI and VLSI research in Japan, especially concerning the basic technology useful for microfabrication. The first computer-controlled vector scan electron-beam exposure system in Japan was reported in 1967. Recently, the variable area rectangular technique has been experimentally pursued. Another group is working on probe forming by quadrupole lenses. A raster scan electron system enabling high charge density electron-beam exposure and use of PMMA resist has been designed and constructed. In the processing field, a high-frequency plasma system, a plasma transport system, and a high-pressure oxidation system are under development. Various self-aligning devices, such as diffusion self-alignment, multiple-wall self-alignment, and those which work near punch-through regions are described in this report.
Keywords
Electrons; Large scale integration; Lenses; Plasma density; Plasma devices; Plasma materials processing; Plasma transport processes; Probes; Resists; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19423
Filename
1480001
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