• DocumentCode
    1063185
  • Title

    1 µm MOSFET VLSI technology: Part I—An overview

  • Author

    Yu, Hwa-Nien ; Reisman, Arnold ; Osburn, Carlton M. ; Critchlow, Dale L.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    26
  • Issue
    4
  • fYear
    1979
  • fDate
    4/1/1979 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    324
  • Abstract
    This paper attempts to provide a technical perspective for a 1 µm MOSFET VLSI technology described in the technical papers that follow. Highlights of various aspects of the technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography, metal silicide interconnections and radiation effects.
  • Keywords
    Circuit testing; Lithography; Logic arrays; Logic circuits; Logic devices; Logic testing; MOSFET circuits; Paper technology; Programmable logic arrays; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19430
  • Filename
    1480008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063185