• DocumentCode
    1063211
  • Title

    1 µm MOSFET VLSI technology: Part III—Logic circuit design methodology and applications

  • Author

    Cook, Peter W. ; Schuster, Stanley E. ; Parrish, James T. ; Dilonardo, Victor ; Freedman, Darryl R.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    26
  • Issue
    4
  • fYear
    1979
  • fDate
    4/1/1979 12:00:00 AM
  • Firstpage
    333
  • Lastpage
    346
  • Abstract
    Logic circuits were designed and fabricated in a 1 µm silicon-gate MOSFET technology. First, conventional random logic chip images using the largely one-dimensional "Weinberger" layout are examined. The image is able to provide chips with an average circuit delay of 3 ns at the 8000 circuit level of integration. Second, two forms of PLA and PLA-based macros are discussed. A dynamic PLA, used in a microprocessor cross section and including 105 product terms, which achieves a 56 ns cycle time is described. A static PLA, designed for 21- ns delay and achieving measured delays from 13 to 21 ns, is also described. Extensions, particularly into low-temperature operation, are discussed.
  • Keywords
    Circuit optimization; Circuit synthesis; Delay; Image analysis; Integrated circuit measurements; MOSFET circuits; Microprocessors; Programmable logic arrays; Very large scale integration; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19432
  • Filename
    1480010