Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET´s

Author

Kao, Ming Jer ; Shieh, Hir Ming ; Hsu, Wei Chou ; Lin, Tien Yih ; Wu, Yue Huei ; Hsu, Rong Tay

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

43

Issue

8

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

1181

Lastpage

1186

Abstract

GaAs field-effect transistors (FET´s) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm

Keywords

CVD coatings; III-V semiconductors; doping profiles; field effect transistors; gallium arsenide; semiconductor doping; 2 micron; GaAs; electron transfer characteristics; extrinsic transconductance; field effect transistor; graded-like triple-δ-doping profile; low-pressure metalorganic chemical vapor deposition; multi-δ-doped GaAs FET; Character generation; Chemical vapor deposition; Current density; Doping profiles; Electrons; FETs; Gallium arsenide; Linearity; Shape; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.506766

Filename

506766