Title :
Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET´s
Author :
Kao, Ming Jer ; Shieh, Hir Ming ; Hsu, Wei Chou ; Lin, Tien Yih ; Wu, Yue Huei ; Hsu, Rong Tay
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
8/1/1996 12:00:00 AM
Abstract :
GaAs field-effect transistors (FET´s) utilizing multiple δ-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-δ-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-δ-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like δ-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-δ-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 μm
Keywords :
CVD coatings; III-V semiconductors; doping profiles; field effect transistors; gallium arsenide; semiconductor doping; 2 micron; GaAs; electron transfer characteristics; extrinsic transconductance; field effect transistor; graded-like triple-δ-doping profile; low-pressure metalorganic chemical vapor deposition; multi-δ-doped GaAs FET; Character generation; Chemical vapor deposition; Current density; Doping profiles; Electrons; FETs; Gallium arsenide; Linearity; Shape; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
